PART |
Description |
Maker |
BAS20 BAS19 BAS21 BAS21TC BAS19TA BAS19TC BAS20TC |
CY62148E MoBL® 4-Mbit (512K x 8) Static RAM SILICON HIGH SPEED SWITCHING DIODE
|
Zetex Semiconductors
|
SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
SST25VF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Spi Serial Flash
|
SST
|
M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
SST27SF020-70-3C-PH |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST
|
S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
SST29SF040 SST29SF040-55-4C-NH SST29SF040-55-4C-PH |
From old datasheet system SST29SF512/010/020/040, SST29VF512/010/020/040 512Kbit/ 1Mbit/ 2Mbit/ 4Mbit (x8) Small-Sector Flash 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
|
SST[Silicon Storage Technology, Inc] SST[Silicon Storage Technology Inc]
|
M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位(x16插槽,多银行,多层次,多突发28兆位闪存(突发)移动存储芯片.8V电源,多芯片封装
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
CY62148ELL-45ZSXA CY62148ELL-45ZSXI CY62148ELL-55S |
4-Mbit (512 K ? 8) Static RAM 4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
CY14B104NA-BA25IT |
4-Mbit (512 K x 8/256 K x 16) nvSRAM
|
Cypress Semiconductor
|
CY14B108L-ZS20XI |
8-Mbit (1024 K 8/512 K 16) nvSRAM
|
Cypress
|